| Autor: |
Shyi-Ming Pan, Ru-Chin Tu, Yu-Mei Fan, R.-C. Yeh, Jung-Tsung Hsu |
| Zdroj: |
IEEE Photonics Technology Letters; May2003, Vol. 15 Issue 5, p649-651, 3p |
| Abstrakt: |
Presents a surface-textured indium-tin-oxide (ITO) transparent ohmic contact layer on p-GaN to increase the optical output of nitride-based light-emitting diodes (LED) without destroying the p-GaN. The surface-textured ITO layer was prepared by lithography and dry etching, and dimensions of the regular pattern were approximately 3 × 3 μm. The operating voltage of the surface-textured LED was almost the same as that of the typical planar LED since the ITO layer was in ohmic contact with the p-GaN. The experimental results indicate that the surface-textured ITO layer is suitable for fabricating high-brightness GaN-based light emitting devices. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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