| Autor: |
Shyi-Ming Pan, Ru-Chin Tu, Yu-Mei Fan, Ruey-Chyn Yeh, Jung-Tsung Hsu |
| Zdroj: |
IEEE Photonics Technology Letters; May2003, Vol. 15 Issue 5, p646-648, 3p |
| Abstrakt: |
This study develops a highly transparent nickel-oxide (NiOx)-indium-tin-oxide (ITO) transparent Ohmic contact with excellent current spreading for p-GaN to increase the optical output power of nitride-based light-emitting diodes (LEDs). The NiOx-ITO transparent Ohmic contact layer was prepared by electron beam in-situ evaporation without postdeposition annealing. Notably, the transmittance of the NiOx-ITO exceeds 90% throughout the visible region of the spectrum and approaches 98% at 470 nm. Moreover, GaN LED chips with dimensions of 300 × 300 μm fabricated with the NiOx-ITO transparent Ohmic contact were developed and produced a low forward voltage of 3.4 V under a nominal forward current of 20 mA and a high optical output power of 6.6 mW. The experimental results indicate that NiOx-ITO bilayer Ohmic contact with excellent current spreading and high transparency is suitable for fabricating high-brightness GaN-based light-emitting devices. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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