| Autor: |
Swint, R.B., Huber, A.E., Yeoh, T.S., Woo, C.Y., Coleman, J.J., Faircloth, B.O., Zediker, M.S. |
| Zdroj: |
IEEE Photonics Technology Letters; Sep2002, Vol. 14 Issue 9, p1237-1239, 3p |
| Abstrakt: |
Very high single lateral mode output powers of 650 mW are obtained from a diode laser with a unique waveguide design. The waveguide flares in the lateral dimension to create a larger spot size on the facet and simultaneously tapers in the transverse dimension to inhibit propagation of higher order lateral modes. These GaAs buried ridge devices are fabricated by selective area epitaxy. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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