Autor: |
Huber, A.E., Yeoh, T.S., Swint, R.B., Woo, C.Y., Lee, K.E., Roh, S.D., Coleman, J.J., Faircloth, B.O., Zediker, M.S. |
Zdroj: |
IEEE Photonics Technology Letters; Oct2001, Vol. 13 Issue 10, p1064-1066, 3p |
Abstrakt: |
A new laser design for single-mode high-power applications is reported. The waveguide is a laterally flaring and transversely tapering GaAs buried ridge fabricated by selective area epitaxy. Single-lateral-mode powers of 200 mW were achieved [ABSTRACT FROM PUBLISHER] |
Databáze: |
Complementary Index |
Externí odkaz: |
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