| Autor: |
Wang, R.H., Stintz, A., Varangis, P.M., Newell, T.C., Li, H., Malloy, K.J., Lester, L.F. |
| Zdroj: |
IEEE Photonics Technology Letters; Aug2001, Vol. 13 Issue 8, p767-769, 3p |
| Abstrakt: |
The first self-assembled InAs quantum dash lasers grown by molecular beam epitaxy on InP (001) substrates are reported. Pulsed room-temperature operation demonstrates wavelengths from 1.60 to 1.66 μm for one-, three-, and five-stack designs, a threshold current density as low as 410 A/cm2 for single-stack uncoated lasers, and a distinctly quantum-wire-like dependence of the threshold current on the laser cavity orientation. The maximal modal gains for lasing in the ground-state with the cavity perpendicular to the dash direction are determined to be 15 cm-1 for single-stack and 22 cm-1 for five-stack lasers [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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