| Autor: |
Ortsiefer, M., Shau, R., Bohm, G., Zigldrum, M., Rosskopf, J., Amann, M.-C. |
| Zdroj: |
IEEE Photonics Technology Letters; Nov2000, Vol. 12 Issue 11, p1435-1437, 3p |
| Abstrakt: |
Excellent lasing performance is demonstrated for a 1.83-μm InGaAlAs-InP vertical-cavity surface-emitting laser (VCSEL) utilizing the buried tunnel junction technology. Threshold currents as low as 190 μA at 20°C and operating temperatures as high as 90°C have been measured. These values are the best ones reported so far for long-wavelength VCSELs. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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