| Autor: |
Garbuzov, D.Z., Lee, H., Khalfin, V., Martinelli, R., Connolly, J.C., Belenky, G.L. |
| Zdroj: |
IEEE Photonics Technology Letters; Jul1999, Vol. 11 Issue 7, p794-796, 3p |
| Abstrakt: |
A new approach in the design of (Al)InGaAsSb-GaSb quantum-well separate confinement heterostructure (QW-SCH) diode lasers has led to continuous-wave (CW) room-temperature lasing up to 2.7 μm. This has been achieved by using quasiternary heavily strained InGaSb(As) QW's inside a broad-waveguide SCH laser structure. The QW compositions are chosen in the region outside the miscibility gap and, as a consequence, do not suffer from clustering and composition inhomogeneity normally found with quaternary InGaAsSb compounds of 2.3-2.7-μm spectral range. Very low threshold current density (~300 A/cm2) and high CW output powers (>100 mW) were obtained from devices operating in the 2.3-2.6-μm wavelength range [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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