| Autor: |
Baeyens, Y., Pullela, R., Mattia, J.P., Tsai, H.-S., Chen, Y.-K. |
| Zdroj: |
IEEE Microwave & Guided Wave Letters; Nov1999, Vol. 9 Issue 11, p461-463, 3p |
| Abstrakt: |
To date, distributed amplifiers based on heterojunction bipolar transistors (HBTs) have consistently shown lower gain-bandwidth products than their high electron mobility transistor (HEMT) counterparts. By using improved design techniques, we report a single-stage distributed amplifier with 13-dB gain and 74 GHz 3-dB bandwidth, based on InAlAs/InGaAs-InP HBTs with 160-GHz fT and 140-GHz fmax. The high gain and bandwidth results in a gain-bandwidth product of 330 GHz, which is, to our knowledge, the highest reported for HBT-based amplifiers and rivals that of the best InP HEMT distributed amplifiers with e-beam written gate of 0.1-0.15 μm dimension [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
