Carrier mobility in MOSFETs fabricated with Hf-Si-O-N gate dielectric, polysilicon gate electrode, and self-aligned source and drain.
| Autor: | Rotondaro, A.L.P., Visokay, M.R., Shanware, V.A., Chambers, J.J., Colombo, L. |
|---|---|
| Zdroj: | IEEE Electron Device Letters; Oct2002, Vol. 23 Issue 10, p603-605, 3p |
| Databáze: | Complementary Index |
| Externí odkaz: |
|