Fabrication of very high resistivity Si with low loss and cross talk.
| Autor: | Wu, Y.H., Chin, A., Shih, K.H., Wu, C.C., Liao, C.P., Pai, S.C., Chi, C.C. |
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| Zdroj: | IEEE Electron Device Letters; Sep2000, Vol. 21 Issue 9, p442-444, 3p |
| Databáze: | Complementary Index |
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