A BSIM3-based flat-band voltage perturbation model for RTS and 1/f noise.
| Autor: | Martin, S., Li, G.P., Huinan Guan, D'Souza, S. |
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| Zdroj: | IEEE Electron Device Letters; Jan2000, Vol. 21 Issue 1, p30-33, 4p |
| Databáze: | Complementary Index |
| Externí odkaz: |
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| Autor: | Martin, S., Li, G.P., Huinan Guan, D'Souza, S. |
|---|---|
| Zdroj: | IEEE Electron Device Letters; Jan2000, Vol. 21 Issue 1, p30-33, 4p |
| Databáze: | Complementary Index |
| Externí odkaz: |
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