A BSIM3-based flat-band voltage perturbation model for RTS and 1/f noise.
Autor: | Martin, S., Li, G.P., Huinan Guan, D'Souza, S. |
---|---|
Zdroj: | IEEE Electron Device Letters; Jan2000, Vol. 21 Issue 1, p30-33, 4p |
Databáze: | Complementary Index |
Externí odkaz: |