Field and temperature dependence of TDDB of ultrathin gate oxide.
| Autor: | Yassine, A., Nariman, H.E., Olasupo, K. |
|---|---|
| Zdroj: | IEEE Electron Device Letters; Aug1999, Vol. 20 Issue 8, p390-392, 3p |
| Databáze: | Complementary Index |
| Externí odkaz: |
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| Autor: | Yassine, A., Nariman, H.E., Olasupo, K. |
|---|---|
| Zdroj: | IEEE Electron Device Letters; Aug1999, Vol. 20 Issue 8, p390-392, 3p |
| Databáze: | Complementary Index |
| Externí odkaz: |
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