A 250-Mb/s/pin, 1-Gb double-data-rate SDRAM with a bidirectional delay and an interbank shared redundancy scheme.

Autor: Takai, Y., Fujita, M., Nagata, K., Isa, S., Nakazawa, S., Hirobe, A., Ohkubo, H., Sakao, M., Horiba, S., Fukase, T., Takaishi, Y., Matsuo, M., Komuro, M., Uchida, T., Sakoh, T., Saino, K., Uchiyama, S., Takada, Y., Sekine, J., Nakanishi, N.
Zdroj: IEEE Journal of Solid-State Circuits; Feb2000, Vol. 35 Issue 2, p149-162, 14p
Databáze: Complementary Index