| Autor: |
Sönmezoğlu, S., Sönmezoğlu, Ö. Ateş, Çankaya, G., Yıldırım, A., Serin, N. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; Jul2010, Vol. 107 Issue 12, p124518, 6p, 1 Diagram, 5 Graphs |
| Abstrakt: |
High quality sandwich device was fabricated from wheat DNA molecular film by solution processing located between Au and n-type silicon inorganic semiconductor. We have performed the electrical characteristics of the device such as current–voltage (I–V) and capacitance–voltage (C–V) at room temperature. DNA-based on this structure showed an excellent rectifying behavior with a typical ideality factor of 1.22, and that DNA film increased the effective barrier height by influencing the space charge region of Si. We proposed that DNA could be an insulatorlike material with a wide optical band energy gap of 4.19 eV from its optical absorbance characteristics. Additionally, the energy distribution of interface state density, determined from the forward bias I–V characteristics by taking into account the bias dependence of the effective barrier height, decreases exponentially with bias from 7.48×1015 m-2 eV-1 in (Ec-0.40) eV to 8.56×1014 m-2 eV-1 in (Ec-0.72) eV. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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