| Autor: |
Ohtani, Noboru, Katsuno, Masakazu, Takahashi, Jun, Yashiro, Hirokatsu, Kanaya, Masatoshi |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 4/15/1998, Vol. 83 Issue 8, p4487, 4p, 2 Black and White Photographs, 3 Graphs |
| Abstrakt: |
Provides information on an experimental study investigating the impurity incorporation kinetics during modified-Lely growth of silicon carbide (SiC) in terms of several growth parameters. Methodology used to conduct the study; Results of the study; Discussion on the results. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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