Nonlinear distribution model of ions implanted at high doses.
| Autor: | Danilyuk, A. |
|---|---|
| Zdroj: | Journal of Engineering Physics & Thermophysics; Mar1998, Vol. 71 Issue 2, p279-283, 5p |
| Abstrakt: | A nonlinear distribution model of ions implanted at high doses is developed with allowance for sputtering, volume growth of a target, and retardation by interstitial atoms. [ABSTRACT FROM AUTHOR] |
| Databáze: | Complementary Index |
| Externí odkaz: |
|
Full text from SpringerLink