Application of an electron backscatter diffraction pattern to Cu damascene-fabricated interconnections filled by a high-pressure anneal process.

Autor: Yoda, Rika, Nakazawa, Sumio, Onishi, Takashi
Zdroj: Journal of Electronic Materials; Jan2002, Vol. 31 Issue 1, p16-22, 7p
Abstrakt: The microstructure of Cu interconnections fabricated by high-pressure annealing was evaluated using a field emission scanning electron microscope/electron backscatter diffraction pattern (FE-SEM/EBSP) technique, and the results are compared with as-deposited and normally annealed Cu films. The results show some grains extending from the bulk field to the via regions in the case of the high-pressure annealed Cu films. The existence of via holes was also observed, in which all grains were (111) oriented. This indicates that the high-pressure annealing process enables the Cu that in-fills the via holes to develop into favorable microstructures, i.e., single-crystal and with (111) orientation. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index
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