| Autor: |
Liu, Wei, Li, Ming-Fu, Chua, Soo-Jin, Akutsu, Nakao, Matsumoto, Koh |
| Zdroj: |
Journal of Electronic Materials; Apr1999, Vol. 28 Issue 4, p360-363, 4p |
| Abstrakt: |
Semi-transparent Au-Schottky contacts on n-GaN were fabricated and studied by room-temperature photoreflectance spectroscopy. A significant difference was observed in the photoreflectance spectra before and after the evaporation of Au-Schottky contacts. This can be interpreted due to the formation of Schottky barrier at the interface between Au and GaN. Furthermore, for the higher doping sample, Franz-Keldysh oscillations were observed in the photoreflectance, which allowed the accurate determination of Au-Schottky barrier height on GaN. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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