| Autor: |
Berdinskikh, T., Ruda, H., Mei, X., Buchanan, M. |
| Zdroj: |
Journal of Electronic Materials; Mar1998, Vol. 27 Issue 3, p114-121, 8p |
| Abstrakt: |
Orientation dependent etching of photolithographically patterned $$(\bar 1\bar 1\bar 1)$$ GaP was investigated using solutions of HCl:CH3COOH:H2O2. The pattern was prepared using standard ultraviolet lithography and was a two-dimensional grid with an 18 µm repeat, consisting of 15 µm squares separated by 3 µm spaces. The mask sides were aligned along the $$[0\bar 11]$$ and $$[\bar 211]$$ directions. Under appropriate etching conditions, high quality arrays of pyramids were prepared. These pyramids were defined by $$(\bar 100)$$ , $$(0\bar 10)$$ and $$(00\bar 1)$$ facets. It was shown that the etching process depended on the degree of solution aging after initial mixing. For a freshly prepared solution, the etching rate showed an inverse dependence on time. For short etching times (below 5 min), an intermediate etching profile was followed, while for long times (greater than 5 min) etching was kinetically controlled. We demonstrated that controlled etching at extremely low rates (0.1–0.5 µm/min) is feasible with this new approach. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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