| Autor: |
Chia-Chun Liao, Tsung-Yu Chiang, Min-Chen Lin, Tien-Sheng Chao |
| Předmět: |
|
| Zdroj: |
IEEE Electron Device Letters; Apr2010, Vol. 31 Issue 4, p281-283, 3p |
| Abstrakt: |
In this letter, we certify that the compressive SiN capping layer has more potential than the tensile layer for fabrication using the stress memorization technique to enhance NMOS mobility. The mechanism that we have proposed implies that the conventional choice of the capping layer should be modulated from point of view of stress shift rather than using the highest tensile film. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
