Effects of the size of silicon grain on the gate-leakage current in nanocrystalline silicon thin-film transistors.

Autor:	Ling-Feng Mao
Předmět:	SILICON crystals THIN films EFFECT of radiation on transistors NANOCRYSTALS DIELECTRICS SEMICONDUCTOR doping
Zdroj:	Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics; May2010, Vol. 28 Issue 3, p460-465, 6p, 6 Graphs
Abstrakt:	The size of silicon grain in silicon thin-film transistors (TFTs) and the dependence of the gate-leakage current have been theoretically investigated after the effect of the silicon-grain size on the surface potential is considered. After the crystal-size effect has been included, the gate-leakage current of nanocrystalline silicon TFTs strongly depends on the silicon-grain size when the silicon-grain size is in the regime of nanoscale. Such a strong dependent relation results from the large changes in the band gap and dielectric constant due to size effects. The numerical calculations also demonstrate that the effect of the silicon-grain size on the gate-leakage current is independent (or weakly dependent) on the device temperature, the gate voltage, and the active-dopant density. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
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