| Autor: |
Wellenius, P., Smith, E. R., LeBoeuf, S. M., Everitt, H. O., Muth, J. F. |
| Předmět: |
|
| Zdroj: |
Journal of Applied Physics; Jun2010, Vol. 107 Issue 10, p103111-103116, 5p, 1 Diagram, 1 Chart, 2 Graphs |
| Abstrakt: |
The article discusses research in which europium gallium oxide (EuxGa1-x)2O3 thin films were deposited on sapphire substrates by pulsed laser deposition with varying Eu content from x=2.4 to 20 mol %. Researchers studied the optical and physical effects of high europium concentration on these thin films using photoluminescence (PL) spectroscopy, x-ray diffraction (XRD), and Rutherford backscattering spectrometry. They found that the PL spectra demonstrate that emission due to the 5D0 to 7FJ transitions in Eu3+ grows linearly with Eu content up to 10 mol %. They also concluded that time-resolved PL indicates decay parameters remain similar for films with up to 10 mol % Eu and at 20 mol %, but that PL intensity decreases substantially and PL decay accelerates, indicative of parasitic energy transfer processes. XRD shows films to be polycrystalline and beta-phase for low Eu compositions. They determined that increasing Eu content beyond 5 mol % does not continue to modify the film structure and thus, changes in PL spectra and decay cannot be attributed to structural changes in the host. They concluded that the optimal doping for optoelectronic devices based on (EuxGa1-x)2O3 thin films is between 5 and 10 mol %. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
