| Autor: |
Maaskant, Pleun, Akhter, Mahbub, Lambkin, John, Considine, Laurence |
| Předmět: |
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| Zdroj: |
IEEE Transactions on Electron Devices; Aug2001, Vol. 48 Issue 8, p1822, 4p, 4 Black and White Photographs, 1 Diagram, 1 Chart, 1 Graph |
| Abstrakt: |
Presents a study that investigated the device fabrication and characterization of InGaN/GaN multiple quantum well light-emitting diodes on sapphire substrates. Background on light-emitting diodes in semiconductor devices; Methodology; Results and discussion. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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