| Autor: |
Beccard, R., Schoen, O., Wachtendorf, B., Schhmitz, D., Juergensen, H., Woelk, E. |
| Zdroj: |
Journal of Electronic Materials; Oct1997, Vol. 26 Issue 10, p1123-1126, 4p |
| Abstrakt: |
Various Al-Ga-In Nitride alloys have been grown in AIXTRON Planetary Reactors®. GaN is grown with an excellent optical quality and very good thickness uniformity. GaInN with photoluminescence emission wavelengths in the visible blue region have also been produced. AlGaN is demonstrated as the material with the widest bandgap. Furthermore, we will present data on doped material. Characterization of the heterostructures by photoluminescence and sheet resistivity measurements is presented as well. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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