| Autor: |
Brinkevich, D., Lukashevich, M., Prosolovich, V., Skripka, D., Yankovskii, Yu. |
| Zdroj: |
Inorganic Materials; Jul2002, Vol. 38 Issue 7, p637-639, 3p |
| Abstrakt: |
Silicon doped with Er, Gd, or Ho to concentrations from 3 × 1015 to 2.3 × 1017 cm–3 was found to exhibit a negative magnetoresistance at 77 K, which is a manifestation of the giant magnetoresistive effect. This effect is due to the alignment of the magnetic moments of rare-earth clusters along the applied magnetic field, which reduces the scattering of charge carriers. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
Full text from SpringerLink