Deposition of Conductive Films onto Silicon, Germanium, and SiO2 /Si Structures via Pyrolysis of Titanocene and Zirconocene Dichlorides in the Presence of Organosilicon Compounds.

Autor: Mittov, O., Ponomareva, N., Mittova, I., Bezryadin, M.
Zdroj: Inorganic Materials; Jan2002, Vol. 38 Issue 1, p34-38, 5p
Abstrakt: Conductive films were grown on silicon, germanium, and SiO2 /Si structures by chemical vapor deposition using bis(cyclopentadienyl)titanium dichloride (titanocene dichloride) and bis(cyclopentadienyl)zirconium dichloride (zirconocene dichloride). The composition and properties of the films were then modified by annealing in an atmosphere of organosilicon compounds. Films were also produced by deposition from mixtures of titanocene or zirconocene dichloride and organosilicon compounds. The elemental and phase compositions of the films were determined by Auger electron spectroscopy and x-ray diffraction analysis. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index
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