Transformation of luminescence centers in (SiC)0.95(AlN)0.05 epitaxial Layers under Laser Irradiation.

Autor: Safaraliev, G., Emirov, Yu., Kurbanov, M., Isabekova, T.
Zdroj: Inorganic Materials; Oct2000, Vol. 36 Issue 10, p1018-1019, 2p
Abstrakt: The effect of laser irradiation on the photoluminescence of (SiC)0.95(A1N)0.05 epitaxial films was studied. Irradiation was found to dislodge Al and N atoms from their substitutional sites, producing radiative donor-acceptor pairs Alsi-Nc. The average pair separation decreases with increasing irradiation time, as evidenced by the shift of the corresponding emission to higher energies. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index