| Autor: |
Mamedov, T.N., Chaplygin, I.L., Duginov, V.N., Grebinnik, V.G., Gritsaj, K.I., Olshevsky, V.G., Pomjakushin, V.Yu., Stoykov, A.V., Zhukov, V.A., Krivosheev, I.A., Nikolsky, B.A., Ponomarev, A.N., Gorelkin, V.N. |
| Zdroj: |
Hyperfine Interactions; Apr1997, Vol. 105 Issue 1-4, p345-349, 5p |
| Abstrakt: |
The dependence of the residual polarization of negative muons in n type Si with impurity concentration (1.6\pm 0.2)\times 1013\ cm-3 on temperature in the 10–300 K range has been investigated. Measurements were carried out in external magnetic field of 0.08 T transverse to the muon spin. Muon spin relaxation and frequency shift were observed at temperatures below 30 K. The relaxation rate at 30 K is equal to 0.25\pm 0.08\,μ s-1. The frequency shift at 20 K is equal to 7\times 10-3. Both the relaxation rate and the frequency shift grow with decrease of temperature. Below 30 K the relaxation rate is well described by the dependence \varLambda=bT-q, where q=2.8. An analysis of present and earlier published data on behavior of negative muon polarization in silicon is given. A possible mechanism of relaxation and frequency shift of muon spin precession in silicon is considered. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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