| Autor: |
Addepalli, S., Lin, J.-S., Ekstrom, B., Kelber, J. |
| Zdroj: |
Oxidation of Metals; Aug1999, Vol. 52 Issue 1/2, p139-153, 15p |
| Abstrakt: |
The deposition of aluminum on S/Fe(111)(1× 1) at 300 K in UHV results in the formation ofa disordered S-modified Al adlayer. Insertion of Albetween the sulfur atoms and the Fe substrate isindicated by an increase of the S Auger signal withincreasing Al deposition. Room-temperature oxidation ofAl/S/Fe(111) in UHV is inhibited compared to theoxidation of aluminum deposited on the sulfur-freeFe(111). The oxygen-uptake curves and variations in theS(LVV), Fe(MVV) intensities with oxygen exposure arealso consistent with the insertion of the aluminum atomsbetween the S overlayer and the Fe substrate. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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