| Autor: |
He, Jizhong, Culman, T., Hjort, H., Edwards, D. |
| Zdroj: |
Journal of Low Temperature Physics; Feb2001, Vol. 122 Issue 3/4, p129-141, 13p |
| Abstrakt: |
We summarize our earlier work on the prewetting transition in the 4He-rich film in contact with liquid 3He at low temperatures. We make a new fit to the experimental data using a simpler assumption than previously. The strong pressure dependence of the jump in film thickness at the transition Ds min(P) is quantitatively explained. It is due to the depletion of the 3He concentration in the superfluid film. This is caused by the van der Waals field of the wall. As a result of the pressure dependence, the prewetting line begins at a quantum (T=0) critical point at 13.2 atm. The T=0 dewetting pressure is predicted to be 32.5 atm. The low temperature phase diagrams for the system are drawn in the Ds vs pressure plane and in the plane (μ4−μ3) vs μ3, where μ4 and μ3 are the chemical potentials. We predict that the prewetting line is metastable above an applied pressure of 25.75 atm. Above this pressure, bulk hcp 4He crystals should appear. [ABSTRACT FROM AUTHOR] |
| Databáze: |
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| Externí odkaz: |
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