| Abstrakt: |
Vanadium-substituted strontium bismuth tantalate, Sr0.8Bi2.2Ta2− xVxO9 (SBTV x), and strontium bismuth niobate, SrBi2Nb2− xVxO9 (SBNV x), ceramics were synthesized by a low-temperature processing, and their dielectric, ferroelectric and piezoelectric properties were characterized. With the partial substitution of tantalum or niobium by vanadium cations, the single phase of the ABi2M2O9-type structure was preserved and the sintering temperature was significantly decreased. For the SBNV ceramics, the Tc of 437∘C for x = 0.0, the vanadium content hardly changed. On the other hand, the Tc of the SBTV ceramics increased from 408∘C for the non-substituted SBTV to 414∘C for x = 0.05 and then with the increasing vanadium content, the Tc decreased to 379∘C for x = 0.20. The remanent polarizations, Pr, of SBTV and SBNV at room temperature were 4.9 and 5.4 μC/cm2, respectively. All the obtained independent electromechanical coupling factors of the SBTV0.05 ceramics were as follows: kp = 0.119, k31 = 0.073, k33 = 0.165, k15 = 0.051 and kt = 0.134, and the SBNV0.05 ceramics were as follows: kp = 0.074, k31 = 0.045, k33 = 0.175, k15 = 0.106 and kt = 0.140. These coupling factors were higher than those of the non-substituted materials. From these results, the vanadium-substituted SBT and SBN-based materials can be expected to be lead-free piezoelectric resonator materials that can be prepared at low sintering temperatures. [ABSTRACT FROM AUTHOR] |
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