| Autor: |
Sekikawa, Munehisa, Kohno, Takashi, Aihara, Kazuyuki |
| Zdroj: |
Artificial Life & Robotics; Dec2008, Vol. 13 Issue 1, p116-119, 4p |
| Abstrakt: |
A novel MOSFET-based silicon nerve membrane model and its measurement results are described in this paper. This model is designed based on a mathematical structure that is characterized by phase plane analysis and bifurcation theory. The circuit is fabricated through MOSIS TSMC 0.35 μm CMOS process. Measurement results demonstrate that our circuit shows fundamental abilities of excitable cells such as a) a resting state, b) an action potential, c) a threshold, and d) a refractoriness. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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