| Autor: |
Qi-de, Wu, Bing-jian, Guo, Yong-gao, Yan, Xiu-jian, Zhao, Xiao-lin, Hong |
| Zdroj: |
Journal of Wuhan University of Technology; Mar2004, Vol. 19 Issue 1, p54-57, 4p |
| Abstrakt: |
Effect of SiO2 content and sintering process on the composition and properties of Pure Carbon Reaction Bonded Silicon Carbide (PCRBSC) ceramics prepared with C−SiO2 green body by infiltrating silicon was presented. The infiltrating mechanism of C−SiO2 preform was also explored. The experimental results indicate that the shaping pressure increases with the addition of SiO2 to the preform, and the pore size of the body turned finer and distributed in a narrower range, which is beneficial to decreasing the residual silicon content in the sintered materials and to avoiding shock off, thus increasing the conversion rate of SiC. SiO2 was deoxidized by carbon at a high temperature and the gaseous SiO and CO produced are the main reason to the crack of the body at an elevated temperature. If the green body is deposited at 1800°C in vacuum before infiltration crack will not be produced in the preform and fully dense RBSC can be obtained. The ultimate material has the following properties: a density of 3.05–3.12 g/cm3, a strength of 580±32MPa and a hardness of (HRA)91–92.3. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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