| Autor: |
Nordlund, K., Peltola, J., Nord, J., Keinonen, J., Averback, R. S. |
| Předmět: |
|
| Zdroj: |
Journal of Applied Physics; 8/15/2001, Vol. 90 Issue 4, p1710, 8p, 1 Diagram, 3 Charts, 5 Graphs |
| Abstrakt: |
Defect formation in compound semiconductors such as GaAs under ion irradiation is not as well understood as in Si and Ge. We show how a combination of ion range calculations and molecular dynamics computer simulations can be used to predict the atomic-level damage structures produced by MeV ions. The results show that the majority of damage produced in GaAs both by low-energy self-recoils and 6 MeV He ions is in clusters, and that a clear majority of the isolated defects are interstitial. Implications of the results for suggested applications are also discussed. c 2001 American Institute of Physics. Defect formation in compound semiconductors such as GaAs under ion irradiation is not as well understood as in Si and Ge. We show how a combination of ion range calculations and molecular dynamics computer simulations can be used to predict the atomic-level damage structures produced by MeV ions. The results show that the majority of damage produced in GaAs both by low-energy self-recoils and 6 MeV He ions is in clusters, and that a clear majority of the isolated defects are interstitial. Implications of the results for suggested applications are also discussed. c 2001 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
