| Autor: |
Lebedev, V., Polyakov, V. M., Hauguth-Frank, S., Cimalla, V., Wang, Ch. Y., Ecke, G., Schwierz, F., Schober, A., Lozano, J. G., Morales, F. M., González, D., Ambacher, O. |
| Zdroj: |
Journal of Applied Physics; Apr2008, Vol. 103 Issue 7, p073715, 7p |
| Abstrakt: |
We report on the compositional dependencies of electron transport and photoconductive properties for ultrathin metal-semiconductor-metal photodetectors based on In-rich InxGa1-xN alloys. For a In0.64Ga0.36N/GaN structure, the rise time close to the RC constant at low fields has been measured along with a transparency of ∼77% and an absorbance of ∼0.2 at a wavelength of 632 nm. The electron density profiles and low-field mobilities for different compositions of InGaN have been calculated by numerically solving the Schrödinger and Poisson equations and applying the ensemble Monte Carlo method, respectively. It was demonstrated that in ultrathin InxGa1-xN/GaN (0.5
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| Databáze: |
Complementary Index |
| Externí odkaz: |
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