| Autor: |
Godfrey, Anna R., Ullal, Saurabh J., Braly, Linda B., Edelberg, Erik A., Vahedi, Vahid, Aydil, Eray S. |
| Předmět: |
|
| Zdroj: |
Review of Scientific Instruments; Aug2001, Vol. 72 Issue 8, 1 Black and White Photograph, 5 Diagrams, 1 Chart, 13 Graphs |
| Abstrakt: |
Films and adsorbates that deposit on reactor walls during plasma etching and deposition affect the discharge properties such as the charged particle and reactive radical concentrations. A systematic study of this plasma–wall interaction is made difficult by a lack of diagnostic methods that enable one to monitor the chemical nature of the reactor wall surface. A new diagnostic technique based on multiple total internal reflection Fourier transform infrared (MTIR-FTIR) spectroscopy was developed to monitor films and adsorbates on plasma etching and deposition reactor walls with monolayer sensitivity. Applications of this MTIR-FTIR probe are demonstrated. Specifically, we use this probe to (i) detect etch products and films that deposit on the reactor walls during Cl[sub 2] plasma etching of Si, (ii) determine the efficacy of a SF[sub 6] plasma to clean films deposited on reactor walls during Cl[sub 2]/O[sub 2] etching of Si, and (iii) monitor wafer-to-wafer etching reproducibility. © 2001 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
