New buffer concept inherent to pulsed laser induced epitaxy.
| Autor: | Guedj, Cyril, Boulmer, Jacques, Nouet, Ge´rard, Godet, C., Roca i Cabarrocas, P. |
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| Zdroj: | Applied Physics Letters; 5/4/1998, Vol. 72 Issue 18, 1 Black and White Photograph, 1 Graph |
| Abstrakt: | We demonstrate the growth of a 250 nm-thick graded buffer based on Si[sub 1-x-y]Ge[sub x]C[sub y]. This buffer, with 0 |
| Databáze: | Complementary Index |
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