| Autor: |
Sauvage, S., Boucaud, P., Glotin, F., Prazeres, R., Ortega, J.-M., Lemaı⁁tre, A., Ge´rard, J.-M., Thierry-Flieg, V. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 12/28/1998, Vol. 73 Issue 26, p3818, 4p, 3 Graphs |
| Abstrakt: |
We have observed the saturation of intraband absorption in InAs/GaAs self-assembled quantum dots. The investigated n-doped self-assembled quantum dots exhibit an intraband absorption within the conduction band, which is peaked at an 8 μm wavelength. The saturation of the intraband absorption is achieved with an infrared pump delivered by a pulsed free-electron laser. The saturation of the transition is observed for an intensity around approx. 0.6 MW cm-2. The electron relaxation time under intraband excitation is measured by time-resolved pump–probe experiments. An electron relaxation time T[sub 1]approx. 3 ps is reported. © 1998 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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