| Autor: |
Pan, Jen-Wei, Chau, Ken-Gi, Chyi, Jen-Inn, Tu, Yuan-Kuang, Liaw, Jy-Wang |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 4/27/1998, Vol. 72 Issue 17, 1 Diagram, 1 Chart, 3 Graphs |
| Abstrakt: |
The slope efficiency and threshold current density of 1.3 μm AlGaInAs/InP lasers with AlInAs–AlGaInAs multiquantum barrier (MQB) are experimentally studied and compared with the conventional step-index separate confinement heterostructure (SCH) laser. With the MQBs at the guiding layers, the characteristic temperature can be improved as much as 10 K as compared with the conventional SCH laser. This is attributed to the suppression of electron and hole leakage currents. © 1998 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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