| Autor: |
Chandrasekhar, D., McMurran, J., Smith, David J., Kouvetakis, J., Lorentzen, J. D., Mene´ndez, J. |
| Předmět: |
|
| Zdroj: |
Applied Physics Letters; 4/27/1998, Vol. 72 Issue 17, 2 Black and White Photographs, 1 Diagram, 4 Graphs |
| Abstrakt: |
Precursor chemistry and ultrahigh-vacuum chemical vapor deposition have been used to deposit Si[sub 1-y]C[sub y] thin films on (001) Si substrates. Films with carbon compositions ranging up to 20 at. % were deposited at substrate temperatures of 600–740 °C using gas mixtures of SiH[sub 4] with C(SiH[sub 3])[sub 4] or C(SiH[sub 2]Cl)[sub 4], which are (C–H)-free precursors incorporating Si[sub 4]C tetrahedra. The composition of the resulting materials was obtained by Rutherford backscattering spectrometry, including carbon resonance analysis. Cross-sectional transmission electron microscopy and infrared spectroscopy were used to provide microstructural and bonding information. Raman spectroscopy suggested that the substitutional C concentration obtained using this protocol was higher than that obtained by other methods. The addition of small amounts of GeH[sub 4] to the gas mixture had a remarkable effect on growth rates and film crystallinity. © 1998 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
