| Autor: |
Seshadri, S., Eldridge, G. W., Agarwal, A. K. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 4/20/1998, Vol. 72 Issue 16, 1 Chart, 5 Graphs |
| Abstrakt: |
Room temperature free carrier concentrations exceeding 1×10[sup 18] cm[sup -1] have been achieved with 1000 °C implants into 4H–SiC using N and Al (1×10[sup 17] cm[sup -3] using B). A decrease in resistivity is observed for annealing temperatures above ∼1300, ∼1500, and ∼1750 °C for N, Al, and B, respectively. Rutherford backscattering spectroscopy measurements indicate almost complete recrystallization for N-implanted samples and partial recrystallization on the silicon, but not the carbon, sublattice for B- and Al-implanted samples. An implant and species related step formation is also observed. Only boron is observed to diffuse appreciably. A crystal stoichiometry and Fermi level dependent model is proposed to explain the activation results. © 1998 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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