| Autor: |
Kijima, Satoru, Okuyama, Hiroyuki, Sanaka, Yumi, Kobayashi, Takashi, Tomiya, Shigetaka, Ishibashi, Akira |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 7/13/1998, Vol. 73 Issue 2, 6 Diagrams, 5 Graphs |
| Abstrakt: |
We have established the basic stability of ZnSe:N/ZnTe:N superlattice (SL) contact needed for 1000 h of operation. We have fabricated ZnCdSe/ZnSSe/ZnMgSSe separated confinement heterostructure laser diodes with the ZnTe:N contact layer/ZnSe:N/ZnTe:N SL/ZnSe:N cap layer to achieve a low voltage (<5 V) at 500 A cm[sup -2] constant current for 1000 h (electrode test) by the reduction of the thickness of the ZnTe:N contact layer and by the optimization of the N concentration in the ZnSe:N cap layer. We found that, when the thickness of the ZnTe:N contact layer becomes 4 nm, the reduction of N[sub A]–N[sub D] in the ZnSe:N cap layer is prevented, and the defect density in the vicinity of the ZnSe:N/ZnTe:N SL is reduced. It is assumed that the reduction of N[sub A]–N[sub D] in ZnSe:N is caused by the stress in the ZnSe:N cap layer induced by a large lattice mismatch between ZnTe and ZnSe. We confirmed that the reduction of stress in the ZnSe:N layer and the reduction of the structural defect density were achieved by the reduction of the thickness of ZnTe to 4 nm. © 1998 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
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