| Autor: |
Yamaguchi, Shigeo, Kariya, Michihiko, Nitta, Shugo, Takeuchi, Tetsuya, Wetzel, Christian, Amano, Hiroshi, Akasaki, Isamu |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 8/10/1998, Vol. 73 Issue 6, p830, 2p, 3 Graphs |
| Abstrakt: |
We have observed photoluminescence of Al[sub 1-x]In[sub x]N films. The films were grown on GaN by atmospheric pressure metalorganic vapor phase epitaxy. GaN was grown on a c-plane sapphire substrate with a low-temperature deposited AlN buffer layer. Photoluminescence, absorption, and x-ray diffraction measurements have shown that each spectral peak shifts with alloy composition x and that Al[sub 1-x]In[sub x]N heteroepitaxial films are not macroscopically in phase separation and are constituted in the wurzite structure. © 1998 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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