| Autor: |
Han, Jin-Ping, Ma, T. P. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 3/9/1998, Vol. 72 Issue 10, 4 Graphs |
| Abstrakt: |
We have made ferroelectric memory capacitors by depositing a SrBi[sub 2]Ta[sub 2]O[sub 9] thin film on a Si substrate separated by an ultrathin buffer layer of silicon nitride film. The hysteresis in the capacitance–voltage curves suggests a sizable memory window of 2 V with a programming voltage swing of ±7 V. The switching time is estimated to be on the order of nanosecond based on the results of a one-shot pulse experiment. The results from the fatigue test indicate a slight degradation of the memory window after 10[sup 11] switching cycles. These properties are encouraging for the development of ferroelectric memory transistors. © 1998 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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