| Autor: |
Egger, U., Schultz, M., Werner, P., Breitenstein, O., Tan, T. Y., Go¨sele, U., Franzheld, R., Uematsu, M., Ito, H. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 5/1/1997, Vol. 81 Issue 9, p6056, 6p |
| Abstrakt: |
Interdiffusion coefficients on the group V sublattice of GaAs were determined in GaAsP/GaAs and GaAsSb/GaAs superlattices. Strained GaAs[sub 0.86]P[sub 0.14]/GaAs, GaAs[sub 0.8]P[sub 0.2]/GaAs[sub 0.975]P[sub 0.025] and GaAs[sub 0.98]Sb[sub 0.02/GaAs superlattices were annealed between 850°C and 1100°C under different arsenic vapor pressures. The diffusion coefficient was measured by secondary ion mass spectroscopy and cathodoluminescence spectroscopy. The interdiffusion coefficient was higher under arsenic-rich conditions than under gallium-rich conditions, pointing to an interstitial-substitutional type of diffusion mechanism. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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