| Autor: |
Davidson, B. R., Newman, R. C., Fushimi, H., Wada, K., Yokoyama, H., Inoue, N. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 6/1/1997, Vol. 81 Issue 11, p7255, 6p |
| Abstrakt: |
Highly carbon doped (001) oriented GaAs layers were grown by metalorganic vapor phase epitaxy using the precursor trimethylgallium with either arsine or trimethylarsenic. Postgrowth infrared measurements using polarized light demonstrate that proposed grown-in planar carbon-hydrogen [H-(C[sub As])[sub 2]] complexes, giving vibrational absorption at 2688 cm[sup −1], have the two C[sub As] atoms aligned along the [110] direction. A previously unreported absorption peak at 576cm[sup −1] exhibits polarization dependent absorption orthogonal to that of the 2688 cm[sup −1] line. Investigation of a sample containing the [D-(C[sub As])[sub 2]] complex indicates that the 576 cm[sup −1] line would have to be a transverse mode of the unpaired C[sub As] atom. Polarization difference spectra show the presence of other aligned carbon related complexes giving absorption close to the line (582 cm[sup −1]) due to isolated C[sub As] atoms. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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