| Autor: |
Kreskovsky, J. P., Grubin, H. L. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 6/1/1997, Vol. 81 Issue 11, p7326, 19p |
| Abstrakt: |
The means by which deep traps in annealed low temperature molecular beam epitaxy grown GaAs are responsible for its remarkable semi-insulating and short lifetime properties has been the subject of much discussion. For example, while low dc bias and high speed phototransient measurements can be explained as consequences of a homogeneous trap distribution in the non-stoichiometric material, experiments demonstrating the presence of electrically active precipitates must be dealt with. The study below, which is numerical, concludes that a consistent argument based on the presence of electrically active precipitates, coupled to a surrounding distribution of traps, will account for much of the observed experimental phenomena. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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