| Autor: |
Atabaev, I. G., Matchanov, N. A., Khazhiev, M. U., Yusupova, Sh. A. |
| Předmět: |
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| Zdroj: |
Technical Physics Letters; Feb2010, Vol. 36 Issue 2, p115-118, 4p, 2 Black and White Photographs, 1 Diagram, 2 Graphs |
| Abstrakt: |
Single-crystalline Si1 − xGe x ingots with a germanium content of up to 35 at. %, a diameter of 10mm, and a length of up to 10 cm were grown using the crucibleless float-zone melting technique. The ingots had a homogeneous distribution of germanium and a low density of dislocations. The material was characterized with respect to the structure and electrical properties. The resistivity and the carrier lifetime, mobility, and concentration in Si1 − xGe x single crystals have been studied as functions of the germanium content. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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