Enhancement-Mode GaN MIS-HEMTs With n-GaN/i-AlN/n-GaN Triple Cap Layer and High-k Gate Dielectrics.

Autor:	Kanamura, Masahito, Ohki, Toshihiro, Kikkawa, Toshihide, Imanishi, Kenji, Imada, Tadahiro, Yamada, Atsushi, Hara, Naoki
Předmět:	MODULATION-doped field-effect transistors FIELD-effect transistors POWER electronics TRANSISTORS DIELECTRICS ELECTRICAL engineering materials
Zdroj:	IEEE Electron Device Letters; Mar2010, Vol. 31 Issue 3, p189-191, 3p
Abstrakt:	This letter presents details of high-performance enhancement-mode GaN MIS high-electron-mobility transistor (MIS-HEMT) devices. Devices with an n-GaN/i-AlN/n-GaN triple cap layer, a recessed-gate structure, and high-k gate dielectrics show high drain current and complete enhancement-mode operation. The maximum drain current and threshold voltage (Vth) are 800 mA/mm and +3 V, respectively. These results indicate that a recessed AlGaN/GaN MIS-HEMT with the triple cap could be a promising new technology for future device applications. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
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