| Autor: |
Yang, K. N., Huang, H. T., Chen, M. J., Lin, Y. M., Yu, M. C., Jang, S. M., Yu, Douglas C. H., Liang, M. S. |
| Předmět: |
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| Zdroj: |
IEEE Transactions on Electron Devices; Jun2001, Vol. 48 Issue 6, p1159, 6p, 7 Black and White Photographs, 3 Diagrams, 5 Graphs |
| Abstrakt: |
Focuses on a study which examined the edge direct tunneling of electron from polysilicon to underlying n-type drain extension in off-state n-channel MOSFETs having utlrathin gate oxide. Mechanisms for off-state drain leakage; Details on the experiment; Conclusion. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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